12 March 2014 Watt-level continuous-wave diode lasers at 1180 nm with InGaAs quantum wells
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Abstract
High-power broad area lasers at 1180 nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 1200 h at 1 W and are believed to be a key component for the manufacturing of miniaturized laser modules in the yellow and orange spectrum by single-pass second harmonic generation to bridge the spectral region currently not accessible with direct emitting diode lasers. Future applications are laser cooling of sodium, high resolution glucose content measurements as well as spectroscopy on rare earth elements.
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K. Paschke, F. Bugge, G. Blume, D. Feise, W. John, S. Knigge, M. Matalla, H. Wenzel, G. Erbert, "Watt-level continuous-wave diode lasers at 1180 nm with InGaAs quantum wells", Proc. SPIE 8965, High-Power Diode Laser Technology and Applications XII, 896509 (12 March 2014); doi: 10.1117/12.2037752; https://doi.org/10.1117/12.2037752
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