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12 March 2014 High power and high efficiency kW 88x-nm multi-junction pulsed diode laser bars and arrays
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There is great interest in the development of high-power, high-efficiency and low cost QCW 88x-nm diode laser bars and arrays for pumping solid state lasers. We report on the development of kW 88x-nm diode laser bars that are based on a bipolar cascade design, in which multiple lasers are epitaxially grown in electrical series on a single substrate. Multiple laser junctions, each of which is based on nLight’s high performance 88x-nm epitaxial design, are separated by low resistance tunnel junctions with resistance as low as 8.0x10-6 Ω-cm2. Optimization of bar geometry and wafer fabrication processes was explored for electrical and optical performance improvement in double-junction diode lasers. A QCW power of 630 W was demonstrated in a 3-mm wide mini-bar with 3-mm cavity length. Peak efficiency of 61% was measured with 200 s and 14 Hz pulses, at a heatsink temperature of 10 °C. Further power scaling was demonstrated in a 1-cm wide bar with 3-mm cavity length, where a record high peak power of 1.77 kW was measured at 1 kA drive current. Ongoing work for further power scaling includes development of triple-junction diode laser bars and double-junction bar-stack that emits < 10kW optical power.
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Zhigang Chen, John Bai, Weimin Dong, Xingguo Guan, Shiguo Zhang, Sandrio Elim, Ling Bao, Mike Grimshaw, Mark Devito, and Manoj Kanskar "High power and high efficiency kW 88x-nm multi-junction pulsed diode laser bars and arrays", Proc. SPIE 8965, High-Power Diode Laser Technology and Applications XII, 896514 (12 March 2014);


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