3 March 2014 Graphene-based saturable absorbers in semiconductor lasers
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Abstract
Due to its unique zero-bandgap structure, linear disperion of electrons and compatibility with various optoelec- tronic platforms, graphene has become one of the principal materials of interest with strong development for many nonlinear optical devices. Functionalized graphene-composites exhibit excellent optical limiting properties while single layer graphene speci cally, has shown great promise as a saturable absorber in mode locking ber and solid state lasers from the visible to infrared regime. However, more recently work has been done to in- tegrate graphene in a vertical-external-cavity-surface-emitting-lasers (VECSELs). Currently VECSELs employ semiconductor-based saturable absorbers which have a narrow tuning range and require complex fabrication procedures. By developing a graphene-based saturable absorber, one can take advantage of its zero bandgap structure and therefore its frequency-independent absorption as well as its thermal and mechanical stability to passively modelocking lasers over a wide frequency range { potentially through the terahertz regime. Here we report on recent developments in graphene mode-locking of VECSELs, speci cally for high power operation. Further, work done in studying the nonlinear optical properties of graphene pertaining to the development of sat- urable absorbers as well as optical limiters will be presented. Finally preliminary fabrication and characterization work conducted to integrate the graphene-based materials in a VECSEL will be presented.
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Saima Husaini, Robert G. Bedford, "Graphene-based saturable absorbers in semiconductor lasers", Proc. SPIE 8966, Vertical External Cavity Surface Emitting Lasers (VECSELs) IV, 896608 (3 March 2014); doi: 10.1117/12.2039714; https://doi.org/10.1117/12.2039714
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