3 March 2014 Wafer-fused VECSELs emitting in the 1310nm waveband
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Abstract
Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga)As/GaAs DBRs. We present for the first time Watt-level 1310 nm wafer-fused VCSELs based on gain mirrors with heat dissipation in the “flip-chip” configuration. Even though output power levels in this approach is lower than with intra-cavity diamond heat-spreaders, the “flip-chip configuration demonstrates higher quality optical emission and is preferable for industrial applications in optical amplifiers, intra-cavity doubled lasers, etc.
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A. Sirbu, A. Sirbu, K. Pierscinski, K. Pierscinski, A. Mereuta, A. Mereuta, V. Iakovlev, V. Iakovlev, A. Caliman, A. Caliman, Z. Micovic, Z. Micovic, N. Volet, N. Volet, J. Rautiainen, J. Rautiainen, J. Heikkinen, J. Heikkinen, J. Lyytikainen, J. Lyytikainen, A. Rantamäki, A. Rantamäki, O. Okhotnikov, O. Okhotnikov, E. Kapon, E. Kapon, } "Wafer-fused VECSELs emitting in the 1310nm waveband", Proc. SPIE 8966, Vertical External Cavity Surface Emitting Lasers (VECSELs) IV, 89660G (3 March 2014); doi: 10.1117/12.2039692; https://doi.org/10.1117/12.2039692
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