3 March 2014 Wafer-fused VECSELs emitting in the 1310nm waveband
Author Affiliations +
Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga)As/GaAs DBRs. We present for the first time Watt-level 1310 nm wafer-fused VCSELs based on gain mirrors with heat dissipation in the “flip-chip” configuration. Even though output power levels in this approach is lower than with intra-cavity diamond heat-spreaders, the “flip-chip configuration demonstrates higher quality optical emission and is preferable for industrial applications in optical amplifiers, intra-cavity doubled lasers, etc.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Sirbu, A. Sirbu, K. Pierscinski, K. Pierscinski, A. Mereuta, A. Mereuta, V. Iakovlev, V. Iakovlev, A. Caliman, A. Caliman, Z. Micovic, Z. Micovic, N. Volet, N. Volet, J. Rautiainen, J. Rautiainen, J. Heikkinen, J. Heikkinen, J. Lyytikainen, J. Lyytikainen, A. Rantamäki, A. Rantamäki, O. Okhotnikov, O. Okhotnikov, E. Kapon, E. Kapon, "Wafer-fused VECSELs emitting in the 1310nm waveband", Proc. SPIE 8966, Vertical External Cavity Surface Emitting Lasers (VECSELs) IV, 89660G (3 March 2014); doi: 10.1117/12.2039692; https://doi.org/10.1117/12.2039692

Back to Top