6 March 2014 Picosecond-laser bulk modification, luminescence, and Raman lasing in single-crystal diamond
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Abstract
Bulk modification and micro-structuring of diamonds using ultra-short laser pulses is of great interest due to its potential in photonic applications, radiation detectors and diamond gem marking. We report on bulk micro-structuring and stimulated Raman scattering (SRS) in type IIa single crystal diamond with multi pulse irradiation by picosecond-laser pulses at the wavelength 532nm (10ps & 44ps). The experiment was expanded by additional setups for on-line video imaging and spectroscopic measurements during laser irradiation and structure growth in the bulk diamond from the backside of the crystal. We discuss the influence of the crystal orientation ({100} and {110}) relative to the laser beam onto (i) the optical breakdown threshold, (ii) the character of the structural modifications and (iii) generation of SRS during irradiation. We show that the formation of bulk microstructures dramatically influences the behavior of the SRS and that the structure growth and the laser-induced breakdown in the bulk are governed by the dielectric breakdown mechanism. We will further present the conditions for efficient SRS lasing depending on the different pulse durations. Based on the Stokes-to-anti-Stokes intensity ratio in the recorded SRS spectra we will finally propose a method of local temperature measurements in the bulk of diamond to determine the “pre-breakdown” temperature.
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B. Neuenschwander, B. Neuenschwander, B. Jaeggi, B. Jaeggi, V. Romano, V. Romano, S. M. Pimenov, S. M. Pimenov, } "Picosecond-laser bulk modification, luminescence, and Raman lasing in single-crystal diamond", Proc. SPIE 8967, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX, 89670B (6 March 2014); doi: 10.1117/12.2040545; https://doi.org/10.1117/12.2040545
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