6 March 2014 Precision laser annealing of silicon devices for enhanced electro-optic performance
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We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing window over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots.
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Daniel A. Bender, Daniel A. Bender, Christopher T. DeRose, Christopher T. DeRose, Andrew Starbuck, Andrew Starbuck, Jason C. Verley, Jason C. Verley, Mark W. Jenkins, Mark W. Jenkins, "Precision laser annealing of silicon devices for enhanced electro-optic performance", Proc. SPIE 8967, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX, 89670S (6 March 2014); doi: 10.1117/12.2037339; https://doi.org/10.1117/12.2037339

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