6 March 2014 Study of fast laser induced cutting of silicon materials
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Abstract
We report on a fast machining process for cutting silicon wafers using laser radiation without melting or ablating and without additional pretreatment. For the laser induced cutting of silicon materials a defocused Gaussian laser beam has been guided over the wafer surface. In the course of this, the laser radiation caused a thermal induced area of tension without affecting the material in any other way. With the beginning of the tension cracking process in the laser induced area of tension emerged a crack, which could be guided by the laser radiation along any direction over the wafer surface. The achieved cutting speed was greater than 1 m/s. We present results for different material modifications and wafer thicknesses. The qualitative assessment is based on SEM images of the cutting edges. With this method it is possible to cut mono- and polycrystalline silicon wafers in a very fast and clean way, without having any waste products. Because the generated cracking edge is also very planar and has only a small roughness, with laser induced tension cracking high quality processing results are easily accessible.
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S. Weinhold, S. Weinhold, A. Gruner, A. Gruner, R. Ebert, R. Ebert, J. Schille, J. Schille, H. Exner, H. Exner, } "Study of fast laser induced cutting of silicon materials", Proc. SPIE 8967, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX, 89671J (6 March 2014); doi: 10.1117/12.2039819; https://doi.org/10.1117/12.2039819
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