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6 March 2014 Study of fast laser induced cutting of silicon materials
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We report on a fast machining process for cutting silicon wafers using laser radiation without melting or ablating and without additional pretreatment. For the laser induced cutting of silicon materials a defocused Gaussian laser beam has been guided over the wafer surface. In the course of this, the laser radiation caused a thermal induced area of tension without affecting the material in any other way. With the beginning of the tension cracking process in the laser induced area of tension emerged a crack, which could be guided by the laser radiation along any direction over the wafer surface. The achieved cutting speed was greater than 1 m/s. We present results for different material modifications and wafer thicknesses. The qualitative assessment is based on SEM images of the cutting edges. With this method it is possible to cut mono- and polycrystalline silicon wafers in a very fast and clean way, without having any waste products. Because the generated cracking edge is also very planar and has only a small roughness, with laser induced tension cracking high quality processing results are easily accessible.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Weinhold, A. Gruner, R. Ebert, J. Schille, and H. Exner "Study of fast laser induced cutting of silicon materials", Proc. SPIE 8967, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX, 89671J (6 March 2014);


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