6 March 2014 Synthesis of graphene pattern using laser-induced chemical vapor deposition
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Abstract
In this study, Graphene patterns using laser-induced chemical vapor deposition (LCVD) with a visible CW laser (λ = 532 nm) irradiation at room temperature was investigated. Optically-pumped solid-state laser with a wavelength of 532 nm irradiates a thin nickel foil to induce a local temperature rise, thereby allowing the direct writing of graphene patterns about ~10 μm in width with high growth rate on precisely controlled positions. It is demonstrate that the fabrication of graphene patterns can be achieved with a single scan for each graphene pattern using LCVD with no annealing or preprocessing of the substrate. The scan speed reaches to about ~200 μm/s, which indicates that the graphene pattern with an unite area (10×10 μm) can be grown in 0.05 sec. The number of graphene layers was controlled by laser scan speed on a substrate. The fabricated graphene patterns on nickel foils were directly transferred to desired positions on patterned electrodes. The position-controlled transfer with rapid single-step fabrication of graphene patterns provides an innovative pathway for application of electrical circuits and devices.
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Jongbok Park, Jongbok Park, Swook Hann, Swook Hann, Yongfeng Lu, Yongfeng Lu, "Synthesis of graphene pattern using laser-induced chemical vapor deposition", Proc. SPIE 8968, Laser-based Micro- and Nanoprocessing VIII, 896813 (6 March 2014); doi: 10.1117/12.2038059; https://doi.org/10.1117/12.2038059
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