6 March 2014 Direct selective metallization of AlN ceramics induced by laser radiation
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Abstract
Aluminum nitride (AlN) ceramics has a unique characteristic, namely the ability to form conductive structures on its surface directly by laser-induced decomposition of the base material. Various research has been carried out on obtaining low-ohmic structures depending on process parameters such as the laser power, overlap of subsequent pulses and the type of shielding gas (air, nitrogen and argon). This paper focuses on explaining which factors have the greatest impact on the resistance (resistivity) value of obtained structures. In order to explain the effect of the laser fluence (below and above the ablation threshold of aluminum nitride) on the chemical structure of the conductive layers, qualitative EDX analyses were performed. Optimization of the process allowed obtaining a resistivity of the conductive layers at a level of ρ = 0.64·10-6 Ω·m, with a thickness of aluminum up to 10 μm (sheet resistance RS = 10 mΩ/Sr). This technology can be useful in making printed circuit boards (PCB), various types of sensors as well as radio-frequency identification (RFID) and Lab-On-a-Chip (LOC) structures. This technology can also be useful for the production of metamaterials.
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Arkadiusz J. Antończak, Arkadiusz J. Antończak, Paweł E. Kozioł, Paweł E. Kozioł, Bogusz Stępak, Bogusz Stępak, Patrycja Szymczyk, Patrycja Szymczyk, Krzysztof M. Abramski, Krzysztof M. Abramski, } "Direct selective metallization of AlN ceramics induced by laser radiation ", Proc. SPIE 8968, Laser-based Micro- and Nanoprocessing VIII, 896814 (6 March 2014); doi: 10.1117/12.2038405; https://doi.org/10.1117/12.2038405
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