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7 March 2014 Laser assisted and hermetic room temperature bonding based on direct bonding technology
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A novel method for laser assisted room temperature bonding of two substrates is presented. The method enables the packaging of delicate (bio)structures and/or finished (MEMS) devices, as there is no need for a high temperature annealing process. This also allows the bonding of two substrates with non-matching thermal expansion coefficients. The basis of the presented technology is the ability to create a direct pre-bond between two substrates. These can be two glass substrates, of which one has a thin film metal coating (e.g. Cr. Ti, Ta, Au…), or a silicon-glass combination. After (aligned) pre-bonding of the two wafers, a laser (e.g. a Nd:YAG laser) is used to form a permanent bond line on the bond interface, using the metal layer as a light absorber (or the silicon, in the case of a glass-silicon combination). The permanent bond line width is in the order of 10-50μm. The use of a laser to form the permanent bond ensures a hermetic sealing of the total package; a distinctive advantage over other, more conventional methods of room temperature bonding (e.g. adhesive bonding). He-leak testing showed leak rates in the order of 10-9 mbar l/s. This meets the failure criteria of the MIL-STD-883H standard of 5x10-8 mbar l/s. An added functionality of the proposed method is the possibility to create electrical circuitry on the bond interface, using the laser to modify the metal interlayer, rendering it electrically non-conductive. Biocompatible packages are also possible, by choosing the appropriate interlayer material. This would allow for the fabrication of implantable packages.
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Jeroen Haneveld, Peter Tijssen, Johannes Oonk, Mark Olde Riekerink, Hildebrand Tigelaar, Ronny van't Oever, and Marko Blom "Laser assisted and hermetic room temperature bonding based on direct bonding technology", Proc. SPIE 8973, Micromachining and Microfabrication Process Technology XIX, 89730L (7 March 2014);


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