7 March 2014 Design and fabrication of three-axis accelerometer sensor microsystem for wide temperature range applications using semi-custom process
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Abstract
This paper describes an integrated CMOS-MEMS inertial sensor microsystem, consisting of a 3-axis accelerometer sensor device and its complementary readout circuit, which is designed to operate over a wide temperature range from - 55°C to 175°C. The accelerometer device is based on capacitive transduction and is fabricated using PolyMUMPS, which is a commercial process available from MEMSCAP. The fabricated accelerometer device is then post-processed by depositing a layer of amorphous silicon carbide to form a composite sensor structure to improve its performance over an extended wide temperature range. We designed and fabricated a CMOS readout circuit in IBM 0.13μm process that interfaces with the accelerometer device to serve as a capacitance to voltage converter. The accelerometer device is designed to operate over a measurement range of ±20g. The described sensor system allows low power, low cost and mass-producible implementation well suited for a variety of applications with harsh or wide temperature operating conditions.
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A. Merdassi, Y. Wang, G. Xereas, V. P. Chodavarapu, "Design and fabrication of three-axis accelerometer sensor microsystem for wide temperature range applications using semi-custom process", Proc. SPIE 8973, Micromachining and Microfabrication Process Technology XIX, 89730O (7 March 2014); doi: 10.1117/12.2037344; https://doi.org/10.1117/12.2037344
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