7 March 2014 On-chip polarizer on image sensor using advanced CMOS technology
Author Affiliations +
Abstract
The structures in advanced complementary metal-oxide-semiconductor (CMOS) integrated circuit technology are in the range of deep-submicron. It allows designing and integrating nano-photonic structures for the visible to near infrared region on a chip. In this work, we designed and fabricated an image sensor with on-pixel metal wire grid polarizers by using a 65-nm standard CMOS technology. It is known that the extinction ratio of a metal wire grid polarizer is increased with decrease in the grid pitch. With the metal wire layers of the 65-nm technology, the grid pitch sufficiently smaller than the wavelengths of visible light can be realized. The extinction ratio of approximately 20 dB has been successfully achieved at a wavelength of 750 nm. In the CMOS technologies, it is usual to include multiple metal layers. This feature is also useful to increase the extinction ratio of polarizers. We designed dual layer polarizers. Each layer partially reflects incident light. Thus, the layers form a cavity and its transmission spectrum depends on the layer position. The extinction ratio of 19.2 dB at 780 nm was achieved with the grid pitch greater than the single layer polarizer. The high extinction ratio is obtained only red to near infrared region because the fine metal layers of deepsubmicron standard CMOS process is usually composed of Cu. Thus, it should be applied for measurement or observation where wide spectrum is not required such as optical rotation measurement of optically active materials or electro-optic imaging of RF/THz wave.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiyotaka Sasagawa, Kiyotaka Sasagawa, Norimitsu Wakama, Norimitsu Wakama, Toshihiko Noda, Toshihiko Noda, Takashi Tokuda, Takashi Tokuda, Kiyomi Kakiuchi, Kiyomi Kakiuchi, Jun Ohta, Jun Ohta, } "On-chip polarizer on image sensor using advanced CMOS technology", Proc. SPIE 8974, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VII, 89740I (7 March 2014); doi: 10.1117/12.2040012; https://doi.org/10.1117/12.2040012
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

Low cost optical polarization sensor
Proceedings of SPIE (February 21 2007)
Polarization-sensitive Schottky photodiode
Proceedings of SPIE (December 11 1992)
Optical glass: dispersion in the near infrared
Proceedings of SPIE (September 19 2011)

Back to Top