Paper
7 March 2014 Study of nano-scale ITO top grating of GaN LED
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Abstract
We study nano-scale ITO top transmission gratings to improve light extraction efficiency (LEE). We use the finite difference time domain (FDTD) method to measure light extraction from a device with various grating structures and layer thicknesses. We simulate our device using a twodimensional model with top triangular-gratings in a crystal lattice arrangement described by grating cell period (Α), grating cell height (d), and grating cell width (w). We also define ITO layer thickness (L) as the layer between the p-type GaN and the ITO surface layers. Simulation models vary in grating period, grating width, and ITO layer thickness. Our simulations monitor the amount of light emitted from the top, bottom, and sides of the LED model. We calculate the total light extraction and determine which grating duty cycle maximizes LEE. We found that adding a nano-scale grating with optimum duty cycle can achieve 165.67% and 136.77% LEE improvement, respectively, for ITO layer thickness of 230nm and 78nm.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Travis Robinson, Gabriel Halpin, Xiaomin Jin, Xiang-Ning Kang, and Guo-Yi Zhang "Study of nano-scale ITO top grating of GaN LED", Proc. SPIE 8980, Physics and Simulation of Optoelectronic Devices XXII, 898009 (7 March 2014); https://doi.org/10.1117/12.2038008
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Cited by 3 scholarly publications.
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KEYWORDS
Light emitting diodes

Gallium nitride

Finite-difference time-domain method

Instrument modeling

Sapphire

Crystals

Refractive index

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