Development of ZnO films for near-IR plasmonics

David C. Look; K. D. Leedy; D. L. Agresta

doi:10.1117/12.2042548

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7 March 2014 Development of ZnO films for near-IR plasmonics

David C. Look, K. D. Leedy, D. L. Agresta

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Proceedings Volume 8980, Physics and Simulation of Optoelectronic Devices XXII; 89800P (2014) https://doi.org/10.1117/12.2042548
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Ga-doped ZnO grown at 200 °C by pulsed-laser deposition in Ar ambient and annealed face-down on Zn foil at 500 °C in forming gas can attain near-record electrical characteristics for ZnO: resistivity ρ = 1.23 × 10^-4 Ω-cm, mobility μ_Hall = 34.1 cm²/V-s, and free-electron concentration n = 1.4 x 10²¹ cm^-3, leading to a plasmonic resonance wavelength λ_res = 1.05 μm. A value of λ_res near 1 μm is important because metal-based plasmonics are lossy in the IR region. Longer resonant wavelengths in ZnO, e.g., the telecommunication wavelengths λ_res = 1.3 and 1.55 μm, are then simply produced by furnace anneals in air. A relatively unexploited characterization tool for such materials is spectroscopic ellipsometry (SE). By harnessing the full potential of SE we demonstrate full-color maps of thickness d, concentration n_SE, and mobility μ_SE.

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David C. Look, K. D. Leedy, and D. L. Agresta "Development of ZnO films for near-IR plasmonics", Proc. SPIE 8980, Physics and Simulation of Optoelectronic Devices XXII, 89800P (7 March 2014); https://doi.org/10.1117/12.2042548

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