Laser processing of conductive oxides for near-IR plasmonics

Alberto Piqué; Heungsoo Kim; Nicholas A. Charipar; Michael Osofsky

doi:10.1117/12.2040735

7 March 2014 Laser processing of conductive oxides for near-IR plasmonics

Alberto Piqué, Heungsoo Kim, Nicholas A. Charipar, Michael Osofsky

Proceedings Volume 8980, Physics and Simulation of Optoelectronic Devices XXII; 89800Q (2014) https://doi.org/10.1117/12.2040735
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Conventional metals with high carrier concentrations have served to date as the materials of choice for plasmonic and metamaterial devices. However, typical metals are not well suited for near IR (NIR) plasmonic applications because their associated plasma frequencies correspond to the visible and ultraviolet regions of the spectrum. On the other hand, materials with lower plasma frequencies such as conducting oxides like ZnO and VO₂ are capable of more efficiently coupling the electromagnetic radiation for optical metamaterial and plasmonic applications in the NIR. Furthermore, unlike metals, the electrical transport properties of conductive oxides can be modulated intrinsically by doping or extrinsically by applying heat, light or an electrical bias, thus allowing tuning of their electro-optical behavior. At the Naval Research Laboratory (NRL), we have investigated the use of laser processing techniques for the deposition and processing of various types of conducting oxides, such as Al-doped ZnO and W-doped VO₂, which can be optimized over a wide range of optical/electrical properties. This paper will describe the laser deposition of these oxide films and their electrical and optical characterization in the NIR.

Citation Download Citation

Alberto Piqué, Heungsoo Kim, Nicholas A. Charipar, and Michael Osofsky "Laser processing of conductive oxides for near-IR plasmonics", Proc. SPIE 8980, Physics and Simulation of Optoelectronic Devices XXII, 89800Q (7 March 2014); https://doi.org/10.1117/12.2040735

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