7 March 2014 Numerical simulation of deep-UV avalanche photodetectors
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Abstract
We have studied the performance of deep-UV avalanche photodetectors based on AlGaN alloys. We have evaluated the carrier multiplication gains and excess noise factors using a model based on recurrence equations and activated ionization coefficients derived from a full-band Monte Carlo model. We find that for devices with Al0.4Ga0.6N the excess noise factor increases linearly with the gain. When Al0.6Ga0.4N is used, the excess noise factor is significantly reduced. Finally, from the analysis of the possible device configurations, electric field distribution and its magnitude, we find that the fabrication of these devices will be challenging and alternative approaches should be considered.
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Enrico Bellotti, Francesco Bertazzi, "Numerical simulation of deep-UV avalanche photodetectors", Proc. SPIE 8980, Physics and Simulation of Optoelectronic Devices XXII, 89800R (7 March 2014); doi: 10.1117/12.2040789; https://doi.org/10.1117/12.2040789
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