7 March 2014 Simulation of water photo electrolysis with III-nitride semiconductor nano wires
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Water splitting under illumination with a GaN/InGaN planar and nano wire structure is modeled using a drift diffusion approach. The main features of the experiment such as current density without biasing and current saturation effects are explained by the simulation. The electrolyte where ionic transport occurs is modeled as material with diffusion coefficients matching ionic diffusivity experiments. The simulation allows design and analysis of GaN based nano structures and their water photo electrolysis efficiency.
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Bernd Witzigmann, Bernd Witzigmann, Maximilian Bettenhausen, Maximilian Bettenhausen, Marvin Mewes, Marvin Mewes, Heiko Fülle, Heiko Fülle, Friedhard Römer, Friedhard Römer, "Simulation of water photo electrolysis with III-nitride semiconductor nano wires", Proc. SPIE 8980, Physics and Simulation of Optoelectronic Devices XXII, 89800S (7 March 2014); doi: 10.1117/12.2041230; https://doi.org/10.1117/12.2041230

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