7 March 2014 Carrier transport in dichromatic color-coded semipolar (2021) and (2021) III-N LEDs
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Simulation of III-nitride color-coded multiple quantum well (MQW) LED structures was performed using as an experimental benchmark dichromatic semipolar LEDs grown in Ga-polar and N-polar crystallographic orientations (Y. Kawaguchi et.al, APL 100, 231110, 2012). Different QW depths in the color-coded LEDs and opposite interface polarization charges in Ga-polar and N-polar structures provide different conditions for carrier transport across the LED active regions. Combination of several effects was crucial for adequate reproduction of the emission spectra experimentally observed in color-coded structures with violet-aquamarine and aquamarine-violet active region layouts. A standard drift-diffusion transport model wascompleted with rate equations for nonequilibrium QW populations and several high-energy transport features, including the effects of QW carrier overshoot and Auger-assisted QW depopulation. COMSOL-based Optoelectronic Device Modeling Software (ODMS) developed at Ostendo Technologies Inc. was utilized for device simulation.
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Mikhail V. Kisin, Mikhail V. Kisin, Chih-Li Huang, Chih-Li Huang, Hussein S. El-Ghoroury, Hussein S. El-Ghoroury, "Carrier transport in dichromatic color-coded semipolar (2021) and (2021) III-N LEDs", Proc. SPIE 8980, Physics and Simulation of Optoelectronic Devices XXII, 89801M (7 March 2014); doi: 10.1117/12.2045762; https://doi.org/10.1117/12.2045762

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