7 March 2014 Highly-strained InxGa1-xAs1-ySby/GaSb for mid-infrared devices
Author Affiliations +
Abstract
In this work, we report on InxGa1-xAs1-ySby/GaSb structures, where the indium mole fraction (x) varies from x=0 to x<0.50. Although there has been considerable effort to exploit high-indium content InxGa1-xAs1-ySby for longer wavelength applications, high misfit dislocation densities are inevitable and the miscibility gap remains a formidable barrier. In addition to atomically smooth structures, we observed three-dimensional networks of quantum dashes and other results reveal a self-organized composition modulation. Some physical features of the quantum dashes include near one-micron lengths, 90° flip in orientation, and uniformity across a 20 x 20 μm area. We also observe network formation up to a film thickness of 10-nm.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles Meyer, Charles Meyer, Justin Grayer, Justin Grayer, Dan Paterson, Dan Paterson, Emily Cheng, Emily Cheng, Gregory Triplett, Gregory Triplett, } "Highly-strained InxGa1-xAs1-ySby/GaSb for mid-infrared devices", Proc. SPIE 8980, Physics and Simulation of Optoelectronic Devices XXII, 898024 (7 March 2014); doi: 10.1117/12.2040997; https://doi.org/10.1117/12.2040997
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top