7 March 2014 Highly-strained InxGa1-xAs1-ySby/GaSb for mid-infrared devices
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Abstract
In this work, we report on InxGa1-xAs1-ySby/GaSb structures, where the indium mole fraction (x) varies from x=0 to x<0.50. Although there has been considerable effort to exploit high-indium content InxGa1-xAs1-ySby for longer wavelength applications, high misfit dislocation densities are inevitable and the miscibility gap remains a formidable barrier. In addition to atomically smooth structures, we observed three-dimensional networks of quantum dashes and other results reveal a self-organized composition modulation. Some physical features of the quantum dashes include near one-micron lengths, 90° flip in orientation, and uniformity across a 20 x 20 μm area. We also observe network formation up to a film thickness of 10-nm.
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Charles Meyer, Justin Grayer, Dan Paterson, Emily Cheng, Gregory Triplett, "Highly-strained InxGa1-xAs1-ySby/GaSb for mid-infrared devices", Proc. SPIE 8980, Physics and Simulation of Optoelectronic Devices XXII, 898024 (7 March 2014); doi: 10.1117/12.2040997; https://doi.org/10.1117/12.2040997
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