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7 March 2014 The effects of electric field on InGaAs quantum well i-region placement in InAlGaAs solar cells
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InGaAs quantum well / InAlGaAs barrier solar cells were grown and tested in order to evaluate their solar cell performance. These samples were grown with five layers of QWs at varying depths in the intrinsic region of the n-i-p devices. An external quantum efficiency measurement was used to determine the sub-bandgap spectral responsivity, and showed efficient absorption and collection beyond the bulk material bandedge, from 1280 to 1580 nm. Simulations were performed to evaluate electric field strength as a function of depth and a resonant excitation short-circuit current density measurement was then used to characterize the samples with varied quantum well depths. The electric field acting on carriers, photoexcited into the quantum wells, impacts on the probability of those carriers contributing to the measured short-circuit current. We observe the simulated dependence of carrier collection on electric field in these devices, with a 29% increase in relative carrier collection efficiency between the sample experiencing the highest versus the lowest electric field.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher G. Bailey, Matthew P. Lumb, Raymond Hoheisel, Maria Gonzalez, David V. Forbes, Michael K. Yakes, Seth M. Hubbard, Louise C. Hirst, Justin Lorentzen, Joseph G. Tischler, Ken Schmieder, Cory D. Cress, Phillip P. Jenkins, and Robert J. Walters "The effects of electric field on InGaAs quantum well i-region placement in InAlGaAs solar cells ", Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 898104 (7 March 2014);

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