7 March 2014 Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated by protons
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Experimental results on triple-junction solar cells irradiated by 3 MeV proton irradiation to very high damage levels are presented. The minority carrier transport properties were obtained through quantum efficiency and EBIC measurements and an analytical drift-diffusion solver was used in understanding the results for different degradation levels where multiple damage mechanisms are evident.
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S. I. Maximenko, S. I. Maximenko, M. P. Lumb, M. P. Lumb, S. R. Messenger, S. R. Messenger, R. Hoheisel, R. Hoheisel, C. Affouda, C. Affouda, D. Scheiman, D. Scheiman, M. Gonzalez, M. Gonzalez, J. Lorentzen, J. Lorentzen, P. P. Jenkins, P. P. Jenkins, R. J. Walters, R. J. Walters, "Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated by protons", Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 89810U (7 March 2014); doi: 10.1117/12.2040938; https://doi.org/10.1117/12.2040938


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