Cu(In,Ga)Se2 mesa microdiodes: study of edge recombination and behaviour under concentrated sunlight

M. Paire; C. Jean; L. Lombez; S. Collin; J.-L. Pelouard; D. Lincot; J.-F. Guillemoles

doi:10.1117/12.2039579

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7 March 2014 Cu(In,Ga)Se₂ mesa microdiodes: study of edge recombination and behaviour under concentrated sunlight

M. Paire, C. Jean, L. Lombez, S. Collin, J.-L. Pelouard, D. Lincot, J.-F. Guillemoles

Proceedings Volume 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III; 89810Z (2014) https://doi.org/10.1117/12.2039579
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach is applied on Cu(In,Ga)Se2 thin film devices. For this purpose, Cu(In,Ga)Se2 microcells with a mesa design are fabricated. The influence of the edge recombination signal is analyzed. It is found that with an appropriate etching procedure, devices as small as 50x50 μm do not experience edge recombination efficiency limitations. Under concentration, significant Voc gains are seen, leading to an absolute efficiency increase of two points per decade.

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M. Paire, C. Jean, L. Lombez, S. Collin, J.-L. Pelouard, D. Lincot, and J.-F. Guillemoles "Cu(In,Ga)Se₂ mesa microdiodes: study of edge recombination and behaviour under concentrated sunlight", Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 89810Z (7 March 2014); https://doi.org/10.1117/12.2039579

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