7 March 2014 Analytical modeling of III-V solar cells close to the fundamental limit
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Abstract
A highly effective strategy of photon management is to use a back surface reflector. In this work, we present a full analytical model incorporating effects from both the modified generation function and photon recycling in GaAs solar cells with a BSR. We discuss the impact of doping concentration, non-radiative recombination, solar cell dimensions and BSR reflectivity on the efficiency, and compare the prediction of the device models to experimental data measured on GaAs devices. We use the model to predict the performance of alternative III-V materials, such as InP, comparing the predicted performance to state-of-the-art GaAs solar cells.
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Matthew P. Lumb, Matthew P. Lumb, Myles A. Steiner, Myles A. Steiner, John F. Geisz, John F. Geisz, Robert J. Walters, Robert J. Walters, } "Analytical modeling of III-V solar cells close to the fundamental limit", Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 898114 (7 March 2014); doi: 10.1117/12.2041359; https://doi.org/10.1117/12.2041359
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