Paper
7 March 2014 Towards numerical simulation of nonhomogeneous thin-film silicon solar cells
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Abstract
We have developed an algorithm for the numerical simulation of the electrical and optical properties of a thin-film silicon solar cell. The intrinsic layer in the p-i-n solar cell is nonhomogeneous in the thickness direction. This nonhomogeneity is to be engineered via variations in the composition of the amorphous silicon. A layer of a transparent conducting oxide is welded to the p layer and the n layer is backed by a periodically corrugated metallic back reflector. The nonhomogeneous intrinsic layer may trap the incident light better than a homogeneous layer and increase the generation rate of electron-hole pairs. The periodically corrugated metallic back reflector can excite surface plasmon-polariton waves as well as waveguide modes. The generation rate of electron-hole pairs is computed using the rigorous coupledwave approach and the drift-diffusion model is used for the computation of the current density-voltage characteristics of the solar cell.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tom H. Anderson, Muhammad Faryad, Tom G. Mackay, and Akhlesh Lakhtakia "Towards numerical simulation of nonhomogeneous thin-film silicon solar cells", Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 898115 (7 March 2014); https://doi.org/10.1117/12.2041663
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Cited by 2 scholarly publications.
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KEYWORDS
Electrons

Solar cells

Semiconductors

Thin film solar cells

Thin films

Absorption

Silicon solar cells

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