7 March 2014 Beryllium implant activation and damage recovery study in n-type GaSb
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Abstract
Damage induced by the implantation of beryllium in n-type GaSb and its removal by Rapid Thermal Annealing (RTA) are studied in detail by Atomic Force Microscopy (AFM), Cross Sectional Transmission Electron Microscopy (XTEM) and Energy Dispersive X-ray Spectroscopy (EDS). RTA has been implemented with different times and temperatures in order to optimize ion activation and to avoid Sb outdiffusion during the process. Results indicate a lattice quality that is close to pristine GaSb for samples annealed at 600 °C for 10s using a thick Si3N4 capping layer. Electrical response of the implanted diodes is measured and characterized as function of different annealing conditions.
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N. Rahimi, M. Behzadirad, Emma J. Renteria, D. M. Shima, Ayse J. Muniz, T. Busani, Olga Lavrova, G. Balakrishnan, L. F. Lester, "Beryllium implant activation and damage recovery study in n-type GaSb", Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 89811Q (7 March 2014); doi: 10.1117/12.2040276; https://doi.org/10.1117/12.2040276
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