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7 March 2014 Beryllium implant activation and damage recovery study in n-type GaSb
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Damage induced by the implantation of beryllium in n-type GaSb and its removal by Rapid Thermal Annealing (RTA) are studied in detail by Atomic Force Microscopy (AFM), Cross Sectional Transmission Electron Microscopy (XTEM) and Energy Dispersive X-ray Spectroscopy (EDS). RTA has been implemented with different times and temperatures in order to optimize ion activation and to avoid Sb outdiffusion during the process. Results indicate a lattice quality that is close to pristine GaSb for samples annealed at 600 °C for 10s using a thick Si3N4 capping layer. Electrical response of the implanted diodes is measured and characterized as function of different annealing conditions.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Rahimi, M. Behzadirad, Emma J. Renteria, D. M. Shima, Ayse J. Muniz, T. Busani, Olga Lavrova, G. Balakrishnan, and L. F. Lester "Beryllium implant activation and damage recovery study in n-type GaSb", Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 89811Q (7 March 2014);


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