High gain 1.3-μm GaInNAs SOA with fast-gain dynamics and enhanced temperature stability

D. Fitsios; G. Giannoulis; N. Iliadis; V.-M. Korpijärvi; J. Viheriälä; A. Laakso; S. Dris; M. Spyropoulou; H. Avramopoulos; G. T. Kanellos; N. Pleros; M. Guina

doi:10.1117/12.2037904

7 March 2014 High gain 1.3-μm GaInNAs SOA with fast gain dynamics and enhanced temperature stability

D. Fitsios, G. Giannoulis, N. Iliadis, V.-M. Korpijärvi, J. Viheriälä, A. Laakso, S. Dris, M. Spyropoulou, H. Avramopoulos, G. T. Kanellos, N. Pleros, M. Guina

Author Affiliations +

Proceedings Volume 8982, Optical Components and Materials XI; 898208 (2014) https://doi.org/10.1117/12.2037904
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Semiconductor optical amplifiers (SOAs) are a well-established solution of optical access networks. They could prove an enabling technology for DataCom by offering extended range of active optical functionalities. However, in such costand energy-critical applications, high-integration densities increase the operational temperatures and require powerhungry external cooling. Taking a step further towards improving the cost and energy effectiveness of active optical components, we report on the development of a GaInNAs/GaAs (dilute nitride) SOA operating at 1.3μm that exhibits a gain value of 28 dB and combined with excellent temperature stability owing to the large conduction band offset between GaInNAs quantum well and GaAs barrier. Moreover, the characterization results reveal almost no gain variation around the 1320 nm region for a temperature range from 20° to 50° C. The gain recovery time attained values as short as 100 ps, allowing implementation of various signal processing functionalities at 10 Gb/s. The combined parameters are very attractive for application in photonic integrated circuits requiring uncooled operation and thus minimizing power consumption. Moreover, as a result of the insensitivity to heating issues, a higher number of active elements can be integrated on chip-scale circuitry, allowing for higher integration densities and more complex optical on-chip functions. Such component could prove essential for next generation DataCom networks.

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D. Fitsios, G. Giannoulis, N. Iliadis, V.-M. Korpijärvi, J. Viheriälä, A. Laakso, S. Dris, M. Spyropoulou, H. Avramopoulos, G. T. Kanellos, N. Pleros, and M. Guina "High gain 1.3-μm GaInNAs SOA with fast gain dynamics and enhanced temperature stability", Proc. SPIE 8982, Optical Components and Materials XI, 898208 (7 March 2014); https://doi.org/10.1117/12.2037904

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