7 March 2014 Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation
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Proceedings Volume 8982, Optical Components and Materials XI; 898213 (2014) https://doi.org/10.1117/12.2037965
Event: SPIE OPTO, 2014, San Francisco, California, United States
Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silicon. This comes along with a gradual decrease in the resistivity and the thermopower coefficient. It is shown that conductivity in GeTe and Ge-Sb-Te films is consistent with the two-type carrier conduction model. It is anticipated that ion implantation renders electrons to become less localized than holes leading to electron conductivity in certain cases as, for example, in GeTe.
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Yanina G. Fedorenko, Yanina G. Fedorenko, Mark A. Hughes, Mark A. Hughes, Julien L. Colaux, Julien L. Colaux, C. Jeynes, C. Jeynes, Russell M. Gwilliam, Russell M. Gwilliam, Kevin P. Homewood, Kevin P. Homewood, Jin Yao, Jin Yao, Dan W. Hewak, Dan W. Hewak, Tae-Hoon Lee, Tae-Hoon Lee, Stephen R. Elliott, Stephen R. Elliott, B. Gholipour, B. Gholipour, Richard J. Curry, Richard J. Curry, "Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation", Proc. SPIE 8982, Optical Components and Materials XI, 898213 (7 March 2014); doi: 10.1117/12.2037965; https://doi.org/10.1117/12.2037965


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