Optical and electronic properties of bismuth-implanted glasses

M. A. Hughes; Y. Federenko; T. H. Lee; J. Yao; B. Gholipour; R. M. Gwilliam; K. P. Homewood; D. W. Hewak; S. R. Elliott; R. J. Curry

doi:10.1117/12.2036933

7 March 2014 Optical and electronic properties of bismuth-implanted glasses

M. A. Hughes, Y. Federenko, T. H. Lee, J. Yao, B. Gholipour, R. M. Gwilliam, K. P. Homewood, D. W. Hewak, S. R. Elliott, R. J. Curry

Author Affiliations +

Proceedings Volume 8982, Optical Components and Materials XI; 898216 (2014) https://doi.org/10.1117/12.2036933
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Photoluminescence (PL) and excitation spectra of Bi melt-doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glasses, and BaF₂ crystals, all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi²⁺ and Bi clusters.

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M. A. Hughes, Y. Federenko, T. H. Lee, J. Yao, B. Gholipour, R. M. Gwilliam, K. P. Homewood, D. W. Hewak, S. R. Elliott, and R. J. Curry "Optical and electronic properties of bismuth-implanted glasses", Proc. SPIE 8982, Optical Components and Materials XI, 898216 (7 March 2014); https://doi.org/10.1117/12.2036933

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