7 March 2014 Simulation-based design of a pixel for back-side-illuminated CMOS image sensor with thick photo-electric conversion element
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Proceedings Volume 8982, Optical Components and Materials XI; 898227 (2014) https://doi.org/10.1117/12.2041091
Event: SPIE OPTO, 2014, San Francisco, California, United States
The full-specification Super Hi-Vision image sensor realizes 4320 lines of 7680 pixels at 120 frames per second with 12- bit resolution. This sensor requires both high sensitivity and high frame rate, because the illumination per frame decreases as the frame rate increases. Sensitivity of the back-side-illuminated sensor is estimated to be 1.65 times higher than that of the front-side-illuminated sensor, which is calculated from the product of light gathering power of 1.32 times and internal quantum efficiency of 1.25 times. The advantage at high frame rate is that the rising time of the driving voltage waveform of a pixel in the back-side-illuminated sensor is three times faster than that of the front-sideilluminated sensor. To realize a back-side-illuminated structure with a 10 μm-thick photo-electric conversion element, we investigated the cross-sectional potential profile using an np double epitaxial layer structure. Concentrations of the nand p- epitaxial layers were studied, aiming to achieve a transit time of less than 2.3 ns and a potential barrier height of more than 0.117 eV.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiki Arai, Hiroshi Shimamoto, "Simulation-based design of a pixel for back-side-illuminated CMOS image sensor with thick photo-electric conversion element", Proc. SPIE 8982, Optical Components and Materials XI, 898227 (7 March 2014); doi: 10.1117/12.2041091; https://doi.org/10.1117/12.2041091


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