According to excellent photoelectric properties of InGaAs epitaxial material, and important application of the spectral
bands at center wavelength of 1.38 μm and 1.60μm, the new-type monolithic dual-band InGaAs detector is studied in
this paper. The detector was designed and fabricated with mesa structure and Fabry-Perot cavity by thermal evaporation.
The current-voltage characteristics, response spectra of monolithic detector were measured. The bandwidths of 1.38 μm
and 1.60μm waveband detector are 46nm and 54 nm respectively. A 400×2 dual-waveband monolithic detector was
wire-bonded with two 400×1 readout circuits, to form 400×2 dual-waveband InGaAs focal plane arrays (FPAs). At room
temperature, the detectivity D*, non-uniformity, response bandwidth and the non-operative pixel ratio of 1.38 μm
waveband FPAs are 7.71×1011cmHz1/2/W, 6.20%, 46nm and 0.25%, respectively, and the ones of 1.60 μm waveband FPAs are 6.06×1011cmHz1/2/W, 3.20%, 54nm and 0.25%, respectively. The monolithic dual-waveband InGaAs focal plane arrays (FPAs) plays an important roles in developing compact, low-cost and high-precision photoelectric detection (imaging) system.