7 March 2014 The novel dual-waveband SWIR InGaAs FPAs with monolithic integration filter microstructure
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Proceedings Volume 8982, Optical Components and Materials XI; 898229 (2014) https://doi.org/10.1117/12.2042837
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
According to excellent photoelectric properties of InGaAs epitaxial material, and important application of the spectral bands at center wavelength of 1.38 μm and 1.60μm, the new-type monolithic dual-band InGaAs detector is studied in this paper. The detector was designed and fabricated with mesa structure and Fabry-Perot cavity by thermal evaporation. The current-voltage characteristics, response spectra of monolithic detector were measured. The bandwidths of 1.38 μm and 1.60μm waveband detector are 46nm and 54 nm respectively. A 400×2 dual-waveband monolithic detector was wire-bonded with two 400×1 readout circuits, to form 400×2 dual-waveband InGaAs focal plane arrays (FPAs). At room temperature, the detectivity D*, non-uniformity, response bandwidth and the non-operative pixel ratio of 1.38 μm waveband FPAs are 7.71×1011cmHz1/2/W, 6.20%, 46nm and 0.25%, respectively, and the ones of 1.60 μm waveband FPAs are 6.06×1011cmHz1/2/W, 3.20%, 54nm and 0.25%, respectively. The monolithic dual-waveband InGaAs focal plane arrays (FPAs) plays an important roles in developing compact, low-cost and high-precision photoelectric detection (imaging) system.
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Heng-jing Tang, Heng-jing Tang, Xue Li, Xue Li, Yunji Wang, Yunji Wang, Weibo Duan, Weibo Duan, Xiumei Shao, Xiumei Shao, Hai-mei Gong, Hai-mei Gong, } "The novel dual-waveband SWIR InGaAs FPAs with monolithic integration filter microstructure", Proc. SPIE 8982, Optical Components and Materials XI, 898229 (7 March 2014); doi: 10.1117/12.2042837; https://doi.org/10.1117/12.2042837
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