7 March 2014 THz acoustic spectroscopy based on GaN nanostructures
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Due to the high attenuation in vitreous silica, acoustic attenuations in the THz regime are typically measured by incoherent techniques such as Raman, neutron, and X-ray scattering. Here, we utilized multiple-quantum-well structures to demonstrate acoustic spectroscopy of vitreous silica up to THz regime. The acoustic properties of silica thin films prepared by chemical deposition methods were characterized in the sub-THz regime. This technique may be useful in resolving debated issues relating to Boson peak around 1 THz.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kung-Hsuan Lin, Kung-Hsuan Lin, Dzung-Han Tsai, Dzung-Han Tsai, Kuan-Jen Wang, Kuan-Jen Wang, Sheng-Hui Chen, Sheng-Hui Chen, Kai-Lun Chi, Kai-Lun Chi, Jin-Wei Shi, Jin-Wei Shi, Po-Cheng Chen, Po-Cheng Chen, Jinn-Kong Sheu, Jinn-Kong Sheu, "THz acoustic spectroscopy based on GaN nanostructures", Proc. SPIE 8984, Ultrafast Phenomena and Nanophotonics XVIII, 89840C (7 March 2014); doi: 10.1117/12.2036171; https://doi.org/10.1117/12.2036171


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