7 March 2014 THz detection in graphene nanotransistors
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Abstract
Nanotransistors offer great prospect for the development of innovative THz detectors based on the non-linearity of transport characteristics. Semiconductor nanowires are appealing for their one-dimensional nature and intrinsically low capacitance of the devices, while graphene, with its record-high room-temperature mobility, has the potential to exploit plasma wave resonances in the transistor channel to achieve high-responsivity and tuneable detection. First graphene detectors have been recently demonstrated in both monolayer and bilayer field effect devices performances already suitable for first imaging application. Here will discuss the physics and technology of these devices, their operation, as well as first examples of imaging applications.
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Alessandro Tredicucci, Alessandro Tredicucci, Miriam S. Vitiello, Miriam S. Vitiello, Marco Polini, Marco Polini, Vittorio Pellegrini, Vittorio Pellegrini, } "THz detection in graphene nanotransistors", Proc. SPIE 8984, Ultrafast Phenomena and Nanophotonics XVIII, 898410 (7 March 2014); doi: 10.1117/12.2041462; https://doi.org/10.1117/12.2041462
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