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7 March 2014 ErAs:GaAs extrinsic photoconductivity: a new alternative for 1550-nm-driven THz sources
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This paper summarizes our recent progress on the discovery and THz performance of ErAs:GaAs photoconductive devices driven around 1550 nm. We will present the impulse response of such device in a time-domain spectrometer where the detection is realized with a GaAs electro-optic crystal. The full width at half-maximum of the temporal pulse is 500 fs and the corresponding bandwidth is greater than 2.5 THz. We also present different 1550-nm properties of this material including carrier lifetime by pump-probe phototransmission. All evidence to date suggests that the 1550-nm ultrafast behavior in ErAs:GaAs occurs by extrinsic photoconductivity, not two-photon effect.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Martin, J. Middendorf, and E. R. Brown "ErAs:GaAs extrinsic photoconductivity: a new alternative for 1550-nm-driven THz sources", Proc. SPIE 8985, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII, 898502 (7 March 2014);

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