7 March 2014 Doping profile recognition in silicon using terahertz time-domain spectroscopy
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Abstract
Here we demonstrate for the first time that terahertz time domain spectroscopy (THz-TDS) can be used to distinguish doping profile discrepancies in semiconductor silicon wafers. These proof of concept results suggest the suitability of the technique for in-line process control applications in both IC/photovoltaic (PV) industries. The experimental results show that THz radiation is sensitive to the implant dosage changes in the time domains.
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Chih-Yu Jen, Christiaan Richter, "Doping profile recognition in silicon using terahertz time-domain spectroscopy", Proc. SPIE 8985, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII, 89850M (7 March 2014); doi: 10.1117/12.2036241; https://doi.org/10.1117/12.2036241
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