7 March 2014 High-performance room-temperature THz nanodetectors with a narrowband antenna
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Abstract
We report on the development of a novel class of nanowire-based THz detectors in which the field effect transistor (FET) is integrated in a narrow-band antenna. When the THz field is applied between the gate and the source terminals of the FET, a constant source-to-drain photovoltage appears as a result of the non-linear transfer characteristic of the transistor. In order to achieve attoFarad-order capacitance we fabricate lateral gate FET with gate widths smaller than 100 nm. Our devices show a maximum responsivity of 110 V/W without amplification, with noise equivalent power levels ≤ 1 nW/√Hz at room temperature. The 0.3 THz resonant antenna has bandwidth of ~ 10 GHz and opens a path to novel applications of our technology including metrology, spectroscopy, homeland security, biomedical and pharmaceutical applications. Moreover the possibility to extend this approach to relatively large multi-pixel arrays coupled with THz sources makes it highly appealing for a future generation of THz detectors.
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Leonardo Viti, Leonardo Viti, Dominique Coquillat, Dominique Coquillat, Daniele Ercolani, Daniele Ercolani, Wojciech Knap, Wojciech Knap, Lucia Sorba, Lucia Sorba, Miriam S. Vitiello, Miriam S. Vitiello, } "High-performance room-temperature THz nanodetectors with a narrowband antenna", Proc. SPIE 8985, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII, 89850W (7 March 2014); doi: 10.1117/12.2040529; https://doi.org/10.1117/12.2040529
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