7 March 2014 Subharmonic mixing at 0.6 THz in an AlGaAs/InGaAs/AlGaAs field effect transistor
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Abstract
We measured the nonlinear response of field effect transistors fabricated with GaAs-based heterostructures by performing direct detection, heterodyne and subharmonic mixing measurements. The study of the spectral responsivity as a function of different antenna coupling is presented in the 0.18-0.4 GHz range. We also verified the subharmonic and heterodyne mixing at 0.6 THz in a HFET detector with a broadband antenna.
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Valeria Giliberti, Valeria Giliberti, Alessandra Di Gaspare, Alessandra Di Gaspare, Ennio Giovine, Ennio Giovine, Sebastian Boppel, Sebastian Boppel, Alvydas Lisauskas, Alvydas Lisauskas, Hartmut G. Roskos, Hartmut G. Roskos, Michele Ortolani, Michele Ortolani, } "Subharmonic mixing at 0.6 THz in an AlGaAs/InGaAs/AlGaAs field effect transistor", Proc. SPIE 8985, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII, 89851M (7 March 2014); doi: 10.1117/12.2039789; https://doi.org/10.1117/12.2039789
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