8 March 2014 Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs
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Abstract
The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells grown on m-plane oriented substrate are studied in 8K–300K temperature range. The optical spectra reveal strong in-plane optical anisotropies as predicted by group theory. Polarized time resolved temperature-dependent photoluminescence experiments are performed providing access to the relative contributions of the non-radiative and radiative recombination processes. We deduce the variation of the radiative decay time with temperature in the two polarizations.
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Daniel Rosales, Daniel Rosales, B. Gil, B. Gil, T. Bretagnon, T. Bretagnon, F. Zhang, F. Zhang, S. Okur, S. Okur, M. Monavarian, M. Monavarian, N. Izioumskaia, N. Izioumskaia, V. Avrutin, V. Avrutin, Ü. Özgür, Ü. Özgür, H. Morkoç, H. Morkoç, J. H. Leach, J. H. Leach, } "Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89860L (8 March 2014); doi: 10.1117/12.2036984; https://doi.org/10.1117/12.2036984
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