p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics

Songrui Zhao; Zetian Mi; Binh Huy Le

doi:10.1117/12.2040847

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8 March 2014 p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics

Songrui Zhao, Zetian Mi, Binh Huy Le

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Proceedings Volume 8986, Gallium Nitride Materials and Devices IX; 898617 (2014) https://doi.org/10.1117/12.2040847
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

In this paper, we demonstrate that p-type InN nanowires can be realized by direct magnesium (Mg) doping. X-ray photoelectron spectroscopy experiments on the sidewalls of Mg-doped InN nanowires indicate no surface electron accumulation with the background electron concentration below 1×10¹⁶ cm^-3. The presence of Mg-acceptors is clearly observed by the low-temperature photoluminescence (PL) spectroscopy, which shows a band-to-band recombination PL peak and a Mg-acceptor energy level related PL peak. The peak energy separation is about 60 meV, which is consistent with the Mg activation energy in InN. Single nanowire field-effect transistors are further fabricated and investigated, which clearly exhibits a p-type transistor behavior, representing the first direct evidence for p-type conduction in any InN structures. The potential device applications based on InN nanowires are also discussed.

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Songrui Zhao, Zetian Mi, and Binh Huy Le "p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 898617 (8 March 2014); https://doi.org/10.1117/12.2040847

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