p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics

Songrui Zhao; Zetian Mi; Binh Huy Le

doi:10.1117/12.2040847

8 March 2014 p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics

Songrui Zhao, Zetian Mi, Binh Huy Le

Author Affiliations +

Proceedings Volume 8986, Gallium Nitride Materials and Devices IX; 898617 (2014) https://doi.org/10.1117/12.2040847
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

In this paper, we demonstrate that p-type InN nanowires can be realized by direct magnesium (Mg) doping. X-ray photoelectron spectroscopy experiments on the sidewalls of Mg-doped InN nanowires indicate no surface electron accumulation with the background electron concentration below 1×10¹⁶ cm^-3. The presence of Mg-acceptors is clearly observed by the low-temperature photoluminescence (PL) spectroscopy, which shows a band-to-band recombination PL peak and a Mg-acceptor energy level related PL peak. The peak energy separation is about 60 meV, which is consistent with the Mg activation energy in InN. Single nanowire field-effect transistors are further fabricated and investigated, which clearly exhibits a p-type transistor behavior, representing the first direct evidence for p-type conduction in any InN structures. The potential device applications based on InN nanowires are also discussed.

Citation Download Citation

Songrui Zhao, Songrui Zhao, Zetian Mi, Zetian Mi, Binh Huy Le, Binh Huy Le, "p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 898617 (8 March 2014); doi: 10.1117/12.2040847; https://doi.org/10.1117/12.2040847

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