8 March 2014 Defects in GaN based transistors
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Abstract
Electrically active defects in AlGaN/GaN high electron mobility transistors (HEMTs) are the source of intense study due to their linkage to the mechanisms for GaN HEMT degradation upon a variety of stress conditions. The ability to directly characterize traps and identify their sources in GaN HEMTs is challenging, however, and this is due to a combination of the large bandgap of these materials and the complex electrostatics present in these device structures. Furthermore, the targeted extreme operating conditions intended for GaN HEMTs, whether designed for RF or power applications, greatly exacerbate the ability to identify those defects that are most relevant to device degradation under actual operation. Over the past few years, however, we have developed several electronic defect characterization methods based on deep level optical spectroscopy (DLOS) and thermally-based deep level transient spectroscopy (DLTS), which have been adapted from basic studies of defects in GaN and AlGaN to become applicable to working HEMTs. These so-called constant drain current (CID) DLOS/DLTS methods are able to directly provide individual trap concentrations and energy levels for traps that may exist throughout the AlGaN/GaN HEMT bandgap, and can discern between traps under the gate or in the transistor access regions. This talk will first review the CID-DLOS/DLTS methodology and then will focus on the application of these methods to stressed and un-stressed AlGaN/GaN HEMTs. Direct correlations of the formation of several specific traps are made with a variety of HEMT degradation mechanisms induced by stresses that include RF, DC and also proton irradiation
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A. Sasikumar, A. Sasikumar, A. R. Arehart, A. R. Arehart, S. W. Kaun, S. W. Kaun, J. Chen, J. Chen, E. X. Zhang, E. X. Zhang, D. M. Fleetwood, D. M. Fleetwood, R. D. Schrimpf, R. D. Schrimpf, J. S. Speck, J. S. Speck, S. A. Ringel, S. A. Ringel, } "Defects in GaN based transistors", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861C (8 March 2014); doi: 10.1117/12.2042020; https://doi.org/10.1117/12.2042020
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