8 March 2014 III-nitride tunnel junctions for efficient solid state lighting
Author Affiliations +
Abstract
We discuss the design and demonstration ultra-low resistance III-nitride tunnel junctions, and how tunnel junctions could solve the long-standing problem of efficiency droop in solid state lighting. We have used nanoscale band engineering based on polarization and mid-gap states to reduce tunneling resistance by four orders of magnitude. We will discuss experimental demonstration of highly efficient tunnel junctions (resistivity ~ 0.1 mOhm-cm2) in PN junctions, p-contact free LEDs, and multiple junction structures. Finally we will show how tunneling based carrier regeneration in multiple active region cascade LEDs could help to enable low current, high voltage operation to overcome the efficiency droop problem.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sriram Krishnamoorthy, Fatih Akyol, Siddharth Rajan, "III-nitride tunnel junctions for efficient solid state lighting", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861F (8 March 2014); doi: 10.1117/12.2039382; https://doi.org/10.1117/12.2039382
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Highly efficient InGaN MQW LEDs grown on 200 mm Si...
Proceedings of SPIE (March 08 2014)
Long wavelength nanowire light emitting diodes
Proceedings of SPIE (February 27 2014)
InGaN based high efficiency LED
Proceedings of SPIE (September 14 2007)

Back to Top