8 March 2014 Optical properties of InGaN/GaN MQW LEDs grown on Si (111) substrates with low threading dislocation densities
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We have grown blue light-emitting diodes (LEDs) with low threading dislocation densities (TDDs) by using SiN interlayers on Si (111) substrates. Our growth technique using SiN layers makes it possible to decrease twist components (edge-type threading dislocation components). The edge-type TDDs are almost the same values as those of LEDs grown on Al2O3 (0001) substrates. EQE of LEDs grown on Si (111) substrates increases with decreasing edge-type dislocation in the low-current-density region, and the EQE of the sample with low TDD is almost as high as that of the LED grown on an Al2O3 (0001) substrate at room temperature. It is found that the hot/cold factors (HCFs) of LEDs grown on Si (111) substrates increase with decreasing edge-type dislocations in the low-current-density region, but are less than those of an LED grown on an Al2O3 (0001) substrate. Time-resolved photoluminescence (TRPL) shows that the dominant origin of the thermal quenching is edge-type dislocations in our samples, but other defects such as screw-type dislocations also contribute to it. We also found the fluctuated emission patterns consisting of bright and dark areas originated from the difference of Shockley–Read–Hall (SRH) type defect densities in the multi-quantum wells (MQWs) grown on Si (111) substrates. The bright areas spread, and the configurations of the bright areas change into ring-like patterns with reducing edge-type TDDs. We suggest that the internal quantum efficiency (IQE) of dark areas should be promoted to improve the performance of the MQWs grown on Si (111) substrates.
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Shigeya Kimura, Shigeya Kimura, Jumpei Tajima, Jumpei Tajima, Hajime Nago, Hajime Nago, Toshiki Hikosaka, Toshiki Hikosaka, Hisashi Yoshida, Hisashi Yoshida, Kenjiro Uesugi, Kenjiro Uesugi, Shinya Nunoue, Shinya Nunoue, "Optical properties of InGaN/GaN MQW LEDs grown on Si (111) substrates with low threading dislocation densities", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861H (8 March 2014); doi: 10.1117/12.2038714; https://doi.org/10.1117/12.2038714

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