8 March 2014 Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model
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Abstract
In this paper, we discussed the influence of the indium fluctuation to the efficiency droop in LEDs. Both the real and randomly generated indium fluctuation are used in the 3D simulation and compared to the uniform indium distribution quantum wells. We found that the electrical and optical properties in LEDs such as the carrier transport, radiative and Auger recombination, and the droop effect, are strongly affected by these nanoscale indium fluctuations.
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Tsung-Jui Yang, Tsung-Jui Yang, James S. Speck, James S. Speck, Yuh-Renn Wu, Yuh-Renn Wu, } "Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861I (8 March 2014); doi: 10.1117/12.2039374; https://doi.org/10.1117/12.2039374
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