Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers

Masao Kawaguchi; Osamu Imafuji; Kentaro Nagamatsu; Kazuhiko Yamanaka; Shinichi Takigawa; Takuma Katayama

doi:10.1117/12.2037484

8 March 2014 Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers

Masao Kawaguchi, Osamu Imafuji, Kentaro Nagamatsu, Kazuhiko Yamanaka, Shinichi Takigawa, Takuma Katayama

Proceedings Volume 8986, Gallium Nitride Materials and Devices IX; 89861K (2014) https://doi.org/10.1117/12.2037484
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

We report on design and lasing characteristics of GaN vertical-cavity surface-emitting lasers (VCSELs) with an elongated cavity for use in uniform elements of a two-dimensional (2D) laser array. Calculations of VCSELs with the elongated cavity taking into account the wavelength dispersion of the refractive index show that the transverse mode spacing can be significantly narrower than the gain spectrum with a small tradeoff of the differential quantum efficiency. The result clearly shows that the elongated cavity is robust against the thermally induced peakshift of the gain spectrum, and thus preferable for use in elements of density packed laser array for which uniform operation of each element is crucial. The VCSEL with the elongated cavity fabricated by the wafer thinning technique operates under current injection by using highly reflective distributed Bragg reflectors (DBRs) made of transparent ZrO₂ and SiO₂ film stacks. Together with high reflectivity and wide stop band of the DBR, the elongated cavity of 6 μm (36λ) allows multimode lasing oscillation with a mode spacing of 2.9 nm, which is one order of magnitude narrower than the gain spectrum. In addition, we demonstrate a 5x5 GaN VCSEL array.

Citation Download Citation

Masao Kawaguchi, Osamu Imafuji, Kentaro Nagamatsu, Kazuhiko Yamanaka, Shinichi Takigawa, and Takuma Katayama "Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861K (8 March 2014); https://doi.org/10.1117/12.2037484

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