8 March 2014 High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime
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Recent advances in mid-ultraviolet light-emitting diodes grown pseudomorphically on bulk AlN substrates have led to improved efficiencies and lifetimes. For a 266 nm device an output power of 66 mW at 300 mA has been achieved with an external quantum efficiency of 4.5%. More importantly, the lifetimes of these devices have been increased substantially. Testing of LEDs in both surface mount design (SMD) and TO-39 packages show L50 lifetimes well in excess of 1,000 hours under a variety of case temperatures and currents. Package-related catastrophic failures are eliminated through encapsulation and hermetic sealing, further reducing failure rates and extending the lifetime.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Craig G. Moe, Craig G. Moe, James R. Grandusky, James R. Grandusky, Jianfeng Chen, Jianfeng Chen, Ken Kitamura, Ken Kitamura, Mark C. Mendrick, Mark C. Mendrick, Muhammad Jamil, Muhammad Jamil, Masato Toita, Masato Toita, Shawn R. Gibb, Shawn R. Gibb, Leo J. Schowalter, Leo J. Schowalter, "High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861V (8 March 2014); doi: 10.1117/12.2037856; https://doi.org/10.1117/12.2037856

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