8 March 2014 Highly efficient InGaN MQW LEDs grown on 200 mm Si substrates
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Abstract
We demonstrate InGaN MQW LEDs on Si substrates have both high performance and low cost structure. The blue LED structures were grown by metal-organic chemical vapor deposition via unique buffer layers on 200 mm-diameter Si (111) substrates. The epitaxial wafers had slightly ex-situ convex bow without micro-cracks. Median and standard deviation of dominant wavelength by photoluminescence measurement were 448.9 nm and 2.0 nm within 4 mm edge exclusion, respectively. XRC FWHMs of GaN (0002) and GaN (10-12) were 341 arcsec and 388 arcsec, respectively, corresponding to be estimated to edge dislocation density of 2.0 × 109 /cm2. The blue LED structures were fabricated by legacy 8-inch (200-mm) Si device equipment without remodeling, because no particular thicker Si wafer was needed for our LED epitaxial growth. Encapsulated blue lamps were fabricated after dicing with 45 × 45 mil2. Median light output power of 641 mW was obtained under injection current of 350 mA at 25 deg-C. The operating voltage was 2.9 V. It corresponds to wall plug efficiency, WPE of 63 %. Stable operation more than 6,000 hours under 450 mA at 85 deg-C was confirmed. These results suggest the InGaN MQW LEDs on the large-scale Si wafers are promising for the near future solid-state lighting.
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Masaaki Onomura, "Highly efficient InGaN MQW LEDs grown on 200 mm Si substrates", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 898620 (8 March 2014); doi: 10.1117/12.2041082; https://doi.org/10.1117/12.2041082
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