8 March 2014 Numerical and experimental study of SnOx | Ag | SnOx multilayer as indium-free transparent electrode for organic solar cells
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Proceedings Volume 8987, Oxide-based Materials and Devices V; 898706 (2014) https://doi.org/10.1117/12.2039067
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
We propose a SnOx | Ag | SnOx multilayer, deposited in a continuous vacuum atmosphere by E-beam evaporation, as transparent anode for a (poly-3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) bulk heterojunction based Organic Solar Cell (OSC). Optical characterization of the deposited SnOx is performed to determine the dispersion of the complex refractive index. A Transfer Matrix Method (TMM) numerical optimization of the thicknesses of each layer of the electrode is realized to limit the number of manufactured samples. A numerical study using the morphology of the silver inserted between the oxide layers as input data is performed with a Finite Difference Time Domain (FDTD) method to improve the accordance between measurement and optical model. Multilayers are manufactured with the objective to give to the electrode its best conductivity and transparency in the visible spectral range by using the results of the optical optimization. These bare tri-layer electrodes show low sheet resistance (<10 Ω/□) and mean transparency on [400-700] nm spectral band as high as 67 % for the whole Glass | SnOx | Ag | SnOx structure. The trilayer is then numerically studied inside a P3HT:PCBM bulk heterojunction based OSC structure. Intrinsic absorption inside the sole active layer is calculated giving the possibility to perform optical optimization on the intrinsic absorption efficiency inside the active area by considering the media embedding the electrodes.
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Adrien Bou, Philippe Torchio, Damien Barakel, François Thierry, Pierre-Yves Thoulon, Marc Ricci, "Numerical and experimental study of SnOx | Ag | SnOx multilayer as indium-free transparent electrode for organic solar cells", Proc. SPIE 8987, Oxide-based Materials and Devices V, 898706 (8 March 2014); doi: 10.1117/12.2039067; https://doi.org/10.1117/12.2039067
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