8 March 2014 Carrier dynamics in dilute II-VI oxide highly mismatched alloys
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Proceedings Volume 8987, Oxide-based Materials and Devices V; 89870D (2014) https://doi.org/10.1117/12.2039837
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.
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Yan-Cheng Lin, Yan-Cheng Lin, Wu-Ching Chou, Wu-Ching Chou, Jen-Inn Chyi, Jen-Inn Chyi, Tooru Tanaka, Tooru Tanaka, } "Carrier dynamics in dilute II-VI oxide highly mismatched alloys", Proc. SPIE 8987, Oxide-based Materials and Devices V, 89870D (8 March 2014); doi: 10.1117/12.2039837; https://doi.org/10.1117/12.2039837
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